Discrete Semiconductor Products

STGWA30HP65FB

Obsolete

STMicroelectronics

IGBT

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Discrete Semiconductor Products

STGWA30HP65FB

Obsolete

STMicroelectronics

IGBT

Deep-Dive with AI

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	STGWA30HP65FB

Current - Collector (Ic) (Max) [Max]	60 A
Current - Collector Pulsed (Icm)	120 A
Gate Charge	149 nC
IGBT Type	Trench Field Stop
Mounting Type	Through Hole
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3
Power - Max [Max]	260 W
Reverse Recovery Time (trr)	140 ns
Supplier Device Package	TO-247 Long Leads
Switching Energy	293 µJ
Td (on/off) @ 25°C	146 ns
Td (on/off) @ 25°C	-
Test Condition	30 A, 10 Ohm, 15 V, 400 V
Vce(on) (Max) @ Vge, Ic	2 V
Voltage - Collector Emitter Breakdown (Max) [Max]	650 V

STGWA30 Series

Trench gate field-stop, 650 V, 30 A, high speed HB2 series IGBT in a TO-247 long leads package

Part	Supplier Device Package	Test Condition	Current - Collector (Ic) (Max) [Max]	Operating Temperature [Max]	Operating Temperature [Min]	Gate Charge	Vce(on) (Max) @ Vge, Ic	Td (on/off) @ 25°C [custom]	Td (on/off) @ 25°C [custom]	Current - Collector Pulsed (Icm)	Package / Case	Mounting Type	IGBT Type	Power - Max [Max]	Reverse Recovery Time (trr)	Switching Energy	Voltage - Collector Emitter Breakdown (Max) [Max]	Td (on/off) @ 25°C	Td (on/off) @ 25°C	Td (on/off) @ 25°C	Td (on/off) @ 25°C
STMicroelectronics STGWA30H65DFB	TO-247 Long Leads	10 Ohm 15 V 30 A 400 V	60 A	175 °C	-55 °C	149 nC	2 V	46 ns	146 ns	120 A	TO-247-3	Through Hole	Trench Field Stop	260 W	140 ns	293 µJ 382 µJ	650 V
STMicroelectronics STGWA30H60DFB	TO-247 Long Leads	10 Ohm 15 V 30 A 400 V	60 A	175 °C	-55 °C	149 nC	2 V	37 ns	146 ns	120 A	TO-247-3	Through Hole	Trench Field Stop	260 W	53 ns	293 µJ 383 µJ	600 V
STMicroelectronics STGWA30HP65FB	TO-247 Long Leads	10 Ohm 15 V 30 A 400 V	60 A	175 °C	-55 °C	149 nC	2 V			120 A	TO-247-3	Through Hole	Trench Field Stop	260 W	140 ns	293 µJ	650 V	146 ns	-
STMicroelectronics STGWA30H65FB	TO-247 Long Leads	10 Ohm 15 V 30 A 400 V	60 A	175 °C	-55 °C	149 nC	2 V	37 ns	146 ns	120 A	TO-247-3	Through Hole	Trench Field Stop	260 W		151 mJ 293 mJ	650 V
STMicroelectronics STGWA30HP65FB2	TO-247 Long Leads	6.8 Ohm 15 V 30 A 400 V	50 A	175 °C	-55 °C	90 nC	2.1 V			90 A	TO-247-3	Through Hole	Trench Field Stop	167 W	140 ns		650 V	71 ns	-
STMicroelectronics STGWA30H65DFB2	TO-247 Long Leads	6.8 Ohm 15 V 30 A 400 V	50 A	175 °C	-55 °C	90 nC	2.1 V			90 A	TO-247-3	Through Hole	Trench Field Stop	167 W	115 ns	270 µJ 310 µJ	650 V			18.4 ns	71 ns

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 1.70

Description

General part information

STGWA30 Series

The newest IGBT 650 V HB2 series represents an evolution of the advanced proprietary trench gate field-stop structure. The performance of the HB2 series is optimized in terms of conduction, thanks to a better VCE(sat)behavior at low current values, as well as in terms of reduced switching energy. A diode used for protection purposes only is co-packaged in antiparallel with the IGBT. The result is a product specifically designed to maximize efficiency for a wide range of fast applications.

Documents

Technical documentation and resources

No documents available