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TO-247-3 AB EP
Discrete Semiconductor Products

HGTG18N120BND

Obsolete
ON Semiconductor

IGBT 1200V 54A 390W TO247

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TO-247-3 AB EP
Discrete Semiconductor Products

HGTG18N120BND

Obsolete
ON Semiconductor

IGBT 1200V 54A 390W TO247

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationHGTG18N120BND
Current - Collector (Ic) (Max)54 A
Gate Charge165 nC
IGBT TypeNPT
Mounting TypeThrough Hole
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseTO-247-3
Power - Max [Max]390 W
Reverse Recovery Time (trr)75 ns
Supplier Device PackageTO-247-3
Switching Energy1.9 mJ, 1.8 mJ
Td (on/off) @ 25°C23 ns
Td (on/off) @ 25°C170 ns
Test Condition960 V, 15 V, 18 A, 3 Ohm
Vce(on) (Max) @ Vge, Ic2.7 V
Voltage - Collector Emitter Breakdown (Max) [Max]1200 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

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Description

General part information

HGTG18N120BND Series

HGTG18N120BND is based on Non- Punch Through(NPT) IGBT designs. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as UPS, solar inverter, motor control and power supplies.