HGTG18N120BND Series

IGBT, 1200V, NPT

Catalog

IGBT, 1200V, NPT

Part	Td (on/off) @ 25°C	Td (on/off) @ 25°C	Vce(on) (Max) @ Vge, Ic	Voltage - Collector Emitter Breakdown (Max) [Max]	Package / Case	IGBT Type	Current - Collector (Ic) (Max)	Switching Energy	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge	Power - Max [Max]	Reverse Recovery Time (trr)	Test Condition	Mounting Type
ON Semiconductor HGTG18N120BND	23 ns	170 ns	2.7 V	1200 V	TO-247-3	NPT	54 A	1.8 mJ 1.9 mJ	TO-247-3	-55 °C	150 °C	165 nC	390 W	75 ns	3 Ohm 15 V 18 A 960 V	Through Hole

Catalog

IGBT, 1200V, NPT

Key Features

• 26A, 1200V, TC= 110°C

• Low Saturation Voltage : VCE(sat) = 2.45V @ IC= 18A

• Typical Fall Time . . . . . . . . . . . . . . . 140ns @ TJ= 150°C

• Short Circuit Rating

• Low Conduction Loss

Description

HGTG18N120BND is based on Non- Punch Through(NPT) IGBT designs. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as UPS, solar inverter, motor control and power supplies.