Specification	SSM3J56ACT,L3F

Current - Continuous Drain (Id) @ 25°C	1.4 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	1.2 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	4.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	1.6 nC
Input Capacitance (Ciss) (Max) @ Vds	100 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SOT-883, SC-101
Power Dissipation (Max)	500 mW
Rds On (Max) @ Id, Vgs [Max]	390 mOhm
Supplier Device Package	CST3
Technology	MOSFET (Metal Oxide)
Vgs (Max) [Max]	8 V
Vgs(th) (Max) @ Id	1 V

SSM3J56 Series

High-Speed, Low-Loss Solutions | Toshiba MOSFETs, P-ch MOSFET, -20 V, -1.4 A, 0.39 Ω@4.5V, SOT-883(CST3)

Part	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	Operating Temperature	Power Dissipation (Max) [Max]	Technology	FET Type	Supplier Device Package	Package / Case	Rds On (Max) @ Id, Vgs [Max]	Vgs (Max) [Max]	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Gate Charge (Qg) (Max) @ Vgs	Vgs(th) (Max) @ Id	Power Dissipation (Max)
Toshiba Semiconductor and Storage SSM3J56MFV,L3F	1.2 V	4.5 V	150 °C	150 mW	MOSFET (Metal Oxide)	P-Channel	VESM	SOT-723	390 mOhm	8 V	20 V	800 mA	100 pF	Surface Mount
Toshiba Semiconductor and Storage SSM3J56ACT,L3F	1.2 V	4.5 V	150 °C		MOSFET (Metal Oxide)	P-Channel	CST3	SC-101 SOT-883	390 mOhm	8 V	20 V	1.4 A	100 pF	Surface Mount	1.6 nC	1 V	500 mW

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

High-Speed, Low-Loss Solutions | Toshiba MOSFETs, P-ch MOSFET, -20 V, -1.4 A, 0.39 Ω@4.5V, SOT-883(CST3)

Technical documentation and resources