High-Speed, Low-Loss Solutions | Toshiba MOSFETs, P-ch MOSFET, -20 V, -1.4 A, 0.39 Ω@4.5V, SOT-883(CST3)
High-Speed, Low-Loss Solutions | Toshiba MOSFETs, P-ch MOSFET, -20 V, -1.4 A, 0.39 Ω@4.5V, SOT-883(CST3)
High-Speed, Low-Loss Solutions | Toshiba MOSFETs, P-ch MOSFET, -20 V, -1.4 A, 0.39 Ω@4.5V, SOT-883(CST3)
| Part | Drive Voltage (Max Rds On, Min Rds On) [Max] | Drive Voltage (Max Rds On, Min Rds On) [Min] | Operating Temperature | Power Dissipation (Max) [Max] | Technology | FET Type | Supplier Device Package | Package / Case | Rds On (Max) @ Id, Vgs [Max] | Vgs (Max) [Max] | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Input Capacitance (Ciss) (Max) @ Vds | Mounting Type | Gate Charge (Qg) (Max) @ Vgs | Vgs(th) (Max) @ Id | Power Dissipation (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Toshiba Semiconductor and Storage | 1.2 V | 4.5 V | 150 °C | 150 mW | MOSFET (Metal Oxide) | P-Channel | VESM | SOT-723 | 390 mOhm | 8 V | 20 V | 800 mA | 100 pF | Surface Mount | |||
 Toshiba Semiconductor and Storage | 1.2 V | 4.5 V | 150 °C | MOSFET (Metal Oxide) | P-Channel | CST3 | SC-101 SOT-883 | 390 mOhm | 8 V | 20 V | 1.4 A | 100 pF | Surface Mount | 1.6 nC | 1 V | 500 mW |