Specification	JAN2N6033

Current - Collector (Ic) (Max) [Max]	40 A
Current - Collector Cutoff (Max) [Max]	25 mA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	10
Grade	Military
Mounting Type	Through Hole
Operating Temperature [Max]	200 °C
Operating Temperature [Min]	-65 °C
Package / Case	TO-3, TO-204AA
Power - Max [Max]	140 W
Qualification	MIL-PRF-19500/528
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max) [Max]	120 V

JAN2N6033-Transistor Series

NPN Silicon Power 90V to 120V, 40A to 50A

Part	Package / Case	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Current - Collector (Ic) (Max) [Max]	Voltage - Collector Emitter Breakdown (Max) [Max]	Transistor Type	Operating Temperature [Max]	Operating Temperature [Min]	Mounting Type	Power - Max [Max]	Qualification	Grade	Current - Collector Cutoff (Max) [Max]
Microchip Technology JAN2N6033	TO-204AA TO-3	10	40 A	120 V	NPN	200 °C	-65 °C	Through Hole	140 W	MIL-PRF-19500/528	Military	25 mA

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bulk	100	$ 392.08
Microchip Direct	N/A	1	$ 422.24
Newark	Each	100	$ 392.08
		500	$ 377.00

Description

General part information

JAN2N6033-Transistor Series

This specification covers the performance requirements for NPN, silicon, power, 2N6032 and 2N6033 transistors. Three levels of product assurance (JAN, JANTX and JANTXV) are provided for each device type as specified in MIL-PRF-19500/528.

Documents

Technical documentation and resources

Product Change Notice EN

Datasheet

2N6032 and 2N6033

Data Sheets