onsemi-FFH60UP60S Rectifiers Diode Switching 600V 60A 2-Pin(2+Tab) TO-247 Tube

Discrete Semiconductor Products

FFSH1065B-F085

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ON Semiconductor

DIODE SCHOTTKY SIC 650V 11.5A 2-PIN(2+TAB) TO-247 TUBE AUTOMOTIVE AEC-Q101

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Search across all available documentation for this part.

DocumentsDatasheet Product Change Notice EN +1

Discrete Semiconductor Products

FFSH1065B-F085

Active

ON Semiconductor

DIODE SCHOTTKY SIC 650V 11.5A 2-PIN(2+TAB) TO-247 TUBE AUTOMOTIVE AEC-Q101

Deep-Dive with AI

DocumentsDatasheet Product Change Notice EN +1

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	FFSH1065B-F085

Capacitance @ Vr, F	421 pF
Current - Average Rectified (Io)	11.5 A
Current - Reverse Leakage @ Vr	40 µA
Grade	Automotive
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-55 C
Package / Case	TO-247-2
Qualification	AEC-Q101
Reverse Recovery Time (trr)	0 ns
Speed	No Recovery Time
Supplier Device Package	TO-247-2
Technology	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	650 V

FFSH1065B-F085 Series

Silicon Carbide (SiC) Schottky Diode - EliteSiC, 10A, 650V, D2, TO-247-2L

Part	Voltage - DC Reverse (Vr) (Max) [Max]	Qualification	Capacitance @ Vr, F	Grade	Current - Reverse Leakage @ Vr	Speed	Current - Average Rectified (Io)	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Reverse Recovery Time (trr)	Mounting Type	Package / Case	Supplier Device Package	Technology
ON Semiconductor FFSH1065B-F085	650 V	AEC-Q101	421 pF	Automotive	40 µA	No Recovery Time	11.5 A	175 ░C	-55 C	0 ns	Through Hole	TO-247-2	TO-247-2	SiC (Silicon Carbide) Schottky

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	1	$ 10.32
		10	$ 7.11
		100	$ 5.30
		500	$ 4.75
Newark	Each	250	$ 5.21
		500	$ 5.06
ON Semiconductor	N/A	1	$ 4.37

Description

General part information

FFSH1065B-F085 Series

EliteSiC Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size & cost