FFSH1065B-F085 Series

Silicon Carbide (SiC) Schottky Diode - EliteSiC, 10A, 650V, D2, TO-247-2L

Catalog

Silicon Carbide (SiC) Schottky Diode - EliteSiC, 10A, 650V, D2, TO-247-2L

Part	Voltage - DC Reverse (Vr) (Max) [Max]	Qualification	Capacitance @ Vr, F	Grade	Current - Reverse Leakage @ Vr	Speed	Current - Average Rectified (Io)	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Reverse Recovery Time (trr)	Mounting Type	Package / Case	Supplier Device Package	Technology
ON Semiconductor FFSH1065B-F085	650 V	AEC-Q101	421 pF	Automotive	40 µA	No Recovery Time	11.5 A	175 ░C	-55 C	0 ns	Through Hole	TO-247-2	TO-247-2	SiC (Silicon Carbide) Schottky

Catalog

Silicon Carbide (SiC) Schottky Diode - EliteSiC, 10A, 650V, D2, TO-247-2L

Key Features

• Max Junction Temperature 175C

• Avalanche Rated 51 mJ

• High Surge Current Capacity

• Positive Temperature Coefficient

• Ease of Paralleling

• No Reverse Recovery / No Forward Recovery

• AEC-Q101 Qualified

Description

EliteSiC Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size & cost