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Technical Specifications
Parameters and characteristics for this part
| Specification | JAN1N6079 |
|---|---|
| Current - Average Rectified (Io) | 2 A |
| Current - Reverse Leakage @ Vr | 10 µA |
| Grade | Military |
| Mounting Type | Through Hole |
| Operating Temperature - Junction [Max] | 155 °C |
| Operating Temperature - Junction [Min] | -65 C |
| Package / Case | G, Axial |
| Qualification | MIL-PRF-19500/503 |
| Reverse Recovery Time (trr) | 30 ns |
| Speed | 200 mA, 500 ns |
| Supplier Device Package | G, Axial |
| Technology | Standard |
| Voltage - DC Reverse (Vr) (Max) [Max] | 50 V |
| Voltage - Forward (Vf) (Max) @ If | 1.5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Bulk | 100 | $ 40.64 | |
| Microchip Direct | N/A | 1 | $ 43.76 | |
Description
General part information
JAN1N6079-Rectifier Series
This "Ultrafast Recovery" rectifier diode series is military qualified to MIL-PRF19500/503 and is ideal for high-reliability applications where a failure cannot be tolerated. These industry-recognized 3, 6, and 12 Amp rated rectifiers (TL =70ºC) in different package sizes for working peak reverse voltages from 50 to 150 volts are hermetically sealed with voidless-glass construction using an internal "Category I" metallurgical bond. These devices are also available in surface mount MELF package configurations by adding a "US" suffix (see separate data sheet for 1N6073US thru 1N6081US). microchip also offers numerous other rectifier products to meet higher and lower current ratings with various recovery time speed requirements including standard, fast and ultrafast device types in both through-hole and surface mount packages.
Documents
Technical documentation and resources