Discrete Semiconductor Products
NGTB35N65FL2WG
ActiveON Semiconductor
TRANS IGBT CHIP N-CH 650V 70A 3-PIN TO-247 TUBE
Discrete Semiconductor Products
NGTB35N65FL2WG
ActiveON Semiconductor
TRANS IGBT CHIP N-CH 650V 70A 3-PIN TO-247 TUBE
Technical Specifications
Parameters and characteristics for this part
| Specification | NGTB35N65FL2WG |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 70 A |
| Current - Collector Pulsed (Icm) | 120 A |
| Gate Charge | 125 nC |
| IGBT Type | Trench Field Stop |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 175 ░C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-247-3 |
| Power - Max [Max] | 300 W |
| Reverse Recovery Time (trr) | 68 ns |
| Supplier Device Package | TO-247-3 |
| Switching Energy [custom] | 280 µJ |
| Switching Energy [custom] | 840 µJ |
| Td (on/off) @ 25°C | 72 ns, 132 ns |
| Test Condition | 10 Ohm, 400 V, 15 V, 35 A |
| Vce(on) (Max) @ Vge, Ic | 2 V |
| Voltage - Collector Emitter Breakdown (Max) | 650 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Tube | 1 | $ 6.66 | |
| 10 | $ 4.48 | |||
| 100 | $ 3.25 | |||
| 500 | $ 2.72 | |||
| 1000 | $ 2.66 | |||
| Newark | Each | 50 | $ 4.03 | |
| 100 | $ 3.50 | |||
| 250 | $ 2.92 | |||
| 500 | $ 2.84 | |||
| ON Semiconductor | N/A | 1 | $ 2.45 | |
Description
General part information
NGTB35N65FL2 Series
This Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop II Trench construction, and provides superiorperformance in demanding switching applications, offering both lowon state voltage and minimal switching loss. The IGBT is well suitedfor UPS and solar applications. Incorporated into the device is a softand fast co−packaged free wheeling diode with a low forward voltage.
Documents
Technical documentation and resources