NGTB35N65FL2 Series

IGBT, 650V 35A FS2 Solar/UPS

Catalog

IGBT, 650V 35A FS2 Solar/UPS

Part	IGBT Type	Gate Charge	Mounting Type	Test Condition	Current - Collector Pulsed (Icm)	Power - Max [Max]	Supplier Device Package	Package / Case	Reverse Recovery Time (trr)	Vce(on) (Max) @ Vge, Ic	Voltage - Collector Emitter Breakdown (Max)	Td (on/off) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	Current - Collector (Ic) (Max) [Max]	Switching Energy [custom]	Switching Energy [custom]
ON Semiconductor NGTB35N65FL2WG	Trench Field Stop	125 nC	Through Hole	10 Ohm 15 V 35 A 400 V	120 A	300 W	TO-247-3	TO-247-3	68 ns	2 V	650 V	72 ns 132 ns	-55 °C	175 ░C	70 A	280 µJ	840 µJ

Catalog

IGBT, 650V 35A FS2 Solar/UPS

Key Features

• Extremely Efficient Trench with Field Stop Technology

• TJmax = 175°C

• Soft Fast Reverse Recovery Diode

• Optimized for High Speed Switching

• 5µs Short−Circuit Capability

Description

This Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop II Trench construction, and provides superiorperformance in demanding switching applications, offering both lowon state voltage and minimal switching loss. The IGBT is well suitedfor UPS and solar applications. Incorporated into the device is a softand fast co−packaged free wheeling diode with a low forward voltage.