Specification	MCH3333A-TL-W

Current - Continuous Drain (Id) @ 25°C	2 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	1.8 V, 4 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	2.8 nC
Input Capacitance (Ciss) (Max) @ Vds	240 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Power Dissipation (Max) [Max]	900 mW
Rds On (Max) @ Id, Vgs [Max]	215 mOhm
Supplier Device Package	SC-70FL/MCPH3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	10 V
Vgs(th) (Max) @ Id	1.3 V

MCH3333A Series

Single P-Channel Power MOSFET, -30V, -2.0A, 215mΩ

Part	Vgs (Max)	Mounting Type	Drain to Source Voltage (Vdss)	Power Dissipation (Max) [Max]	Rds On (Max) @ Id, Vgs [Max]	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs [Max]	FET Type	Operating Temperature	Technology	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id
ON Semiconductor MCH3333A-TL-W	10 V	Surface Mount	30 V	900 mW	215 mOhm	SC-70FL/MCPH3	1.8 V 4 V	2 A	2.8 nC	P-Channel	150 °C	MOSFET (Metal Oxide)	240 pF	1.3 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

MCH3333A Series

This Power MOSFET is produced using ON Semiconductor’s trench technology, which is specifically designed to minimize gate charge and low on resistance. This device is suitable for applications with low gate charge driving or low on resistance requirements.