MCH3333A Series

Single P-Channel Power MOSFET, -30V, -2.0A, 215mΩ

Catalog

Single P-Channel Power MOSFET, -30V, -2.0A, 215mΩ

Part	Vgs (Max)	Mounting Type	Drain to Source Voltage (Vdss)	Power Dissipation (Max) [Max]	Rds On (Max) @ Id, Vgs [Max]	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs [Max]	FET Type	Operating Temperature	Technology	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id
ON Semiconductor MCH3333A-TL-W	10 V	Surface Mount	30 V	900 mW	215 mOhm	SC-70FL/MCPH3	1.8 V 4 V	2 A	2.8 nC	P-Channel	150 °C	MOSFET (Metal Oxide)	240 pF	1.3 V

Catalog

Single P-Channel Power MOSFET, -30V, -2.0A, 215mΩ

Key Features

• 1.8V drive

• Pb-Free, Halogen Free and RoHS compliance

• ESD Diode-Protected Gate

• Low On-Resistance

Description

This Power MOSFET is produced using ON Semiconductor’s trench technology, which is specifically designed to minimize gate charge and low on resistance. This device is suitable for applications with low gate charge driving or low on resistance requirements.