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Trans MOSFET N-CH 100V 0.73A 4-Pin(3+Tab) SOT-89
Discrete Semiconductor Products

TN2510N8-G

Active
Microchip Technology

MOSFET, N-CHANNEL ENHANCEMENT-MODE, 100V, 1.5 OHM

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Trans MOSFET N-CH 100V 0.73A 4-Pin(3+Tab) SOT-89
Discrete Semiconductor Products

TN2510N8-G

Active
Microchip Technology

MOSFET, N-CHANNEL ENHANCEMENT-MODE, 100V, 1.5 OHM

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationTN2510N8-G
Current - Continuous Drain (Id) @ 25°C730 mA
Drain to Source Voltage (Vdss)100 V
Drive Voltage (Max Rds On, Min Rds On)10 V, 3 V
FET TypeN-Channel
Input Capacitance (Ciss) (Max) @ Vds125 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseTO-243AA
Supplier Device PackageTO-243AA (SOT-89)
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id2 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 1.35
25$ 1.13
100$ 1.02
Digi-Reel® 1$ 1.35
25$ 1.13
100$ 1.02
Tape & Reel (TR) 2000$ 1.02
Microchip DirectT/R 1$ 1.35
25$ 1.13
100$ 1.02
1000$ 0.86
5000$ 0.79
10000$ 0.73

Description

General part information

TN2510 Series

This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown.

Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.