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TO-39
Discrete Semiconductor Products

JANTXV2N5679

Active
Microchip Technology

PNP SILICON AMPLIFIER -100V TO -120V, -1A

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TO-39
Discrete Semiconductor Products

JANTXV2N5679

Active
Microchip Technology

PNP SILICON AMPLIFIER -100V TO -120V, -1A

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationJANTXV2N5679
Current - Collector (Ic) (Max) [Max]1 A
Current - Collector Cutoff (Max) [Max]10 µA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]40
GradeMilitary
Mounting TypeThrough Hole
Operating Temperature [Max]200 °C
Operating Temperature [Min]-65 ░C
Package / CaseTO-39-3 Metal Can, TO-205AD
Power - Max [Max]1 W
QualificationMIL-PRF-19500/582
Supplier Device PackageTO-39
Transistor TypePNP
Vce Saturation (Max) @ Ib, Ic1 V
Voltage - Collector Emitter Breakdown (Max) [Max]100 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyBulk 100$ 26.30
Microchip DirectN/A 1$ 28.32

Description

General part information

JANTXV2N5679-Transistor Series

This specification covers the performance requirements for PNP, silicon, amplifier, 2N5679 and 2N5680 transistors, complimentary to the 2N5681 and 2N5682 transistors. Three levels of product assurance (JAN, JANTX and JANTXV) are provided for each device type as specified in MIL-PRF-19500/582 and two levels of product assurance (JANHC and JANKC) are provided for unencapsulated devices.

Documents

Technical documentation and resources