Discrete Semiconductor Products

NTMSD6N303R2

Obsolete

ON Semiconductor

POWER MOSFET 30V 6A 32 MOHM DUAL N-CHANNEL SO-8 FETKY

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Discrete Semiconductor Products

NTMSD6N303R2

Obsolete

ON Semiconductor

POWER MOSFET 30V 6A 32 MOHM DUAL N-CHANNEL SO-8 FETKY

Deep-Dive with AI

DocumentsDatasheet Datasheet

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	NTMSD6N303R2

Current - Continuous Drain (Id) @ 25°C	6 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Feature	Schottky Diode (Isolated)
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	30 nC
Input Capacitance (Ciss) (Max) @ Vds	950 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-SOIC
Package / Case [x]	0.154 in
Package / Case [y]	3.9 mm
Power Dissipation (Max) [Max]	2 W
Rds On (Max) @ Id, Vgs	32 mOhm
Supplier Device Package	8-SOIC
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.5 V

NTMSD6N303 Series

Power MOSFET 30V 6A 32 mOhm Dual N-Channel SO-8 FETKY

Part	Rds On (Max) @ Id, Vgs	Mounting Type	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	FET Type	Vgs (Max)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Power Dissipation (Max) [Max]	Drain to Source Voltage (Vdss)	Technology	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	Drive Voltage (Max Rds On, Min Rds On)	FET Feature	Package / Case	Package / Case [y]	Package / Case [x]
ON Semiconductor NTMSD6N303R2	32 mOhm	Surface Mount	8-SOIC	950 pF	N-Channel	20 V	2.5 V	30 nC	2 W	30 V	MOSFET (Metal Oxide)	6 A	-55 °C	150 °C	4.5 V 10 V	Schottky Diode (Isolated)	8-SOIC	3.9 mm	0.154 in

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

NTMSD6N303 Series

The FETKY product family incorporates low RDS(on)MOSFETs packaged with an industry leading, low forward drop, low leakage Schottky Barrier rectifier to offer high efficiency components in a space saving configuration. Independent pinouts for MOSFET and schottky die allow the flexibility to use a single component for switching and rectification functions in a wide variety of applications.

Documents

Technical documentation and resources