NTMSD6N303 Series

Power MOSFET 30V 6A 32 mOhm Dual N-Channel SO-8 FETKY

Catalog

Power MOSFET 30V 6A 32 mOhm Dual N-Channel SO-8 FETKY

Part	Rds On (Max) @ Id, Vgs	Mounting Type	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	FET Type	Vgs (Max)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Power Dissipation (Max) [Max]	Drain to Source Voltage (Vdss)	Technology	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	Drive Voltage (Max Rds On, Min Rds On)	FET Feature	Package / Case	Package / Case [y]	Package / Case [x]
ON Semiconductor NTMSD6N303R2	32 mOhm	Surface Mount	8-SOIC	950 pF	N-Channel	20 V	2.5 V	30 nC	2 W	30 V	MOSFET (Metal Oxide)	6 A	-55 °C	150 °C	4.5 V 10 V	Schottky Diode (Isolated)	8-SOIC	3.9 mm	0.154 in

Catalog

Power MOSFET 30V 6A 32 mOhm Dual N-Channel SO-8 FETKY

Key Features

• Pb-Free Packages are Available

Description

The FETKY product family incorporates low RDS(on)MOSFETs packaged with an industry leading, low forward drop, low leakage Schottky Barrier rectifier to offer high efficiency components in a space saving configuration. Independent pinouts for MOSFET and schottky die allow the flexibility to use a single component for switching and rectification functions in a wide variety of applications.