STD15NF10T4
ActiveN-CHANNEL 100 V, 0.06 OHM TYP., 23 A STRIPFET II POWER MOSFET IN A DPAK PACKAGE
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STD15NF10T4
ActiveN-CHANNEL 100 V, 0.06 OHM TYP., 23 A STRIPFET II POWER MOSFET IN A DPAK PACKAGE
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Technical Specifications
Parameters and characteristics for this part
| Specification | STD15NF10T4 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 23 A |
| Drain to Source Voltage (Vdss) | 100 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 40 nC |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 870 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 175 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-252-3, SC-63, DPAK (2 Leads + Tab) |
| Power Dissipation (Max) [Max] | 70 W |
| Rds On (Max) @ Id, Vgs | 65 mOhm |
| Supplier Device Package | DPAK |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 4 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
STD15NF10T4 Series
This Power MOSFET series has been developed using STMicroelectronics' unique STripFET™ process, which is specifically designed to minimize input capacitance and gate charge. This renders the device suitable for use as primary switch in advanced high-efficiency isolated DC-DC converters for telecom and computer applications, and applications with low gate charge driving requirements.
Documents
Technical documentation and resources