Discrete Semiconductor Products
STL64DN4F7AG
ActiveSTMicroelectronics
AUTOMOTIVE-GRADE DUAL N-CHANNEL, 40 V, 7.0 MOHM TYP., 40 A, STRIPFET F7 POWER MOSFET IN A POWERFLAT 5X6 DOUBLE ISLAND PACKAGE
Discrete Semiconductor Products
STL64DN4F7AG
ActiveSTMicroelectronics
AUTOMOTIVE-GRADE DUAL N-CHANNEL, 40 V, 7.0 MOHM TYP., 40 A, STRIPFET F7 POWER MOSFET IN A POWERFLAT 5X6 DOUBLE ISLAND PACKAGE
Technical Specifications
Parameters and characteristics for this part
| Specification | STL64DN4F7AG |
|---|---|
| Configuration | 2 N-Channel (Dual) |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 9.8 nC |
| Grade | Automotive |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 637 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 175 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | 8-PowerVDFN |
| Power - Max [Max] | 57 W |
| Qualification | AEC-Q101 |
| Rds On (Max) @ Id, Vgs | 8.5 mOhm |
| Supplier Device Package | PowerFlat™ (5x6) |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 4 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
STL64 Series
This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.
Documents
Technical documentation and resources
