Integrated Circuits (ICs)

MT53E512M32D1ZW-046 AAT:B

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Micron Technology Inc.

DRAM, LPDDR4, 16 GBIT, 512M X 32BIT, 2.133GHZ, TFBGA, 200 PINS

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Integrated Circuits (ICs)

MT53E512M32D1ZW-046 AAT:B

Active

Micron Technology Inc.

DRAM, LPDDR4, 16 GBIT, 512M X 32BIT, 2.133GHZ, TFBGA, 200 PINS

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Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	MT53E512M32D1ZW-046 AAT:B

Access Time	3.5 ns
Clock Frequency	2.133 GHz
Grade	Automotive
Memory Format	DRAM
Memory Interface	Parallel
Memory Organization [custom]	32
Memory Organization [custom]	512 M
Memory Type	Volatile
Mounting Type	Surface Mount
Operating Temperature [Max]	105 °C
Operating Temperature [Min]	-40 °C
Package / Case	200-TFBGA
Qualification	AEC-Q100
Supplier Device Package	200-TFBGA (10x14.5)
Technology	SDRAM - Mobile LPDDR4X
Voltage - Supply [Max]	1.17 V
Voltage - Supply [Min]	1.06 V
Write Cycle Time - Word, Page	18 ns

MT53E512 Series

Part	Supplier Device Package	Package / Case	Memory Format	Memory Organization [custom]	Memory Organization [custom]	Mounting Type	Technology	Write Cycle Time - Word, Page	Memory Size	Clock Frequency	Memory Organization	Supplier Device Package [y]	Supplier Device Package [x]	Memory Type	Qualification	Memory Interface	Voltage - Supply [Min]	Voltage - Supply [Max]	Grade	Access Time	Operating Temperature [Max]	Operating Temperature [Min]	Voltage - Supply
Micron Technology Inc. MT53E512M32D2FW-046 WT:D TR	200-TFBGA (10x14.5)	200-TFBGA	DRAM	32	512 M	Surface Mount	SDRAM - Mobile LPDDR4
Micron Technology Inc. MT53E512M64D2HJ-046 AUT:B TR	556-WFBGA		DRAM			Surface Mount	SDRAM - Mobile LPDDR4X	18 ns	4 MB	2.133 GHz	512M x 64	12.4	12.4	Volatile	AEC-Q100	Parallel	1.06 V	1.17 V	Automotive	3.5 ns	125 °C	-40 °C
Micron Technology Inc. MT53E512M32D2NP-046 WT:E	200-WFBGA (10x14.5)	200-WFBGA	DRAM	32	512 M	Surface Mount	SDRAM - Mobile LPDDR4			2.133 GHz				Volatile							85 °C	-30 °C	1.1 V
Micron Technology Inc. MT53E512M32D1ZW-046 AAT:B	200-TFBGA (10x14.5)	200-TFBGA	DRAM	32	512 M	Surface Mount	SDRAM - Mobile LPDDR4X	18 ns		2.133 GHz				Volatile	AEC-Q100	Parallel	1.06 V	1.17 V	Automotive	3.5 ns	105 °C	-40 °C
Micron Technology Inc. MT53E512M32D2NP-053 RS WT:H TR	200-WFBGA (10x14.5)	200-WFBGA	DRAM	32	512 M	Surface Mount	SDRAM - Mobile LPDDR4
Micron Technology Inc. MT53E512M32D1ZW-046 AIT:B TR	200-TFBGA (10x14.5)	200-TFBGA	DRAM	32	512 M	Surface Mount	SDRAM - Mobile LPDDR4X	18 ns		2.133 GHz				Volatile	AEC-Q100	Parallel	1.06 V	1.17 V	Automotive	3.5 ns	95 °C	-40 °C
Micron Technology Inc. MT53E512M64D4NK-046 WT:D	366-WFBGA (15x15)	366-WFBGA	DRAM			Surface Mount	SDRAM - Mobile LPDDR4		4 MB	2.133 GHz	512M x 64			Volatile							85 °C	-30 °C	1.1 V
Micron Technology Inc. MT53E512M64D2HJ-046 WT:B	556-WFBGA		DRAM			Surface Mount	SDRAM - Mobile LPDDR4	18 ns	4 MB	2.133 GHz	512M x 64	12.4	12.4	Volatile		Parallel	1.06 V	1.17 V		3.5 ns	85 °C	-25 °C
Micron Technology Inc. MT53E512M32D1ZW-046 IT:B TR	200-TFBGA (10x14.5)	200-TFBGA	DRAM	32	512 M	Surface Mount	SDRAM - Mobile LPDDR4	18 ns		2.133 GHz				Volatile		Parallel	1.06 V	1.17 V		3.5 ns	95 °C	-40 °C
Micron Technology Inc. MT53E512M32D2NP-053 WT:E	200-WFBGA (10x14.5)	200-WFBGA	DRAM	32	512 M	Surface Mount	SDRAM - Mobile LPDDR4

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Box	1	$ 24.36
		10	$ 22.68
		25	$ 22.44
		50	$ 21.89
		100	$ 19.21
		250	$ 18.57
		500	$ 18.07
	N/A	1235	$ 49.97
Newark	Each	1	$ 22.36
		5	$ 21.59
		10	$ 20.82
		25	$ 20.60
		50	$ 20.09
		100	$ 17.64
		250	$ 17.05

Description

General part information

MT53E512 Series

16n prefetch DDR architecture, 8 internal banks per channel for concurrent operation

Single-data-rate CMD/ADR entry, bidirectional/differential data strobe per byte lane

Programmable READ and WRITE latencies (RL/WL), programmable VSS (ODT) termination

Documents

Technical documentation and resources

No documents available