Integrated Circuits (ICs)

MT53E512M64D2HJ-046 WT:B

Active

Micron Technology Inc.

DRAM, 32GBIT, 2.133GHZ, TFBGA-556 ROHS COMPLIANT: YES

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Integrated Circuits (ICs)

MT53E512M64D2HJ-046 WT:B

Active

Micron Technology Inc.

DRAM, 32GBIT, 2.133GHZ, TFBGA-556 ROHS COMPLIANT: YES

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Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	MT53E512M64D2HJ-046 WT:B

Access Time	3.5 ns
Clock Frequency	2.133 GHz
Memory Format	DRAM
Memory Interface	Parallel
Memory Organization	512M x 64
Memory Size	4 MB
Memory Type	Volatile
Mounting Type	Surface Mount
Operating Temperature [Max]	85 °C
Operating Temperature [Min]	-25 °C
Supplier Device Package	556-WFBGA
Supplier Device Package [x]	12.4
Supplier Device Package [y]	12.4
Technology	SDRAM - Mobile LPDDR4
Voltage - Supply [Max]	1.17 V
Voltage - Supply [Min]	1.06 V
Write Cycle Time - Word, Page	18 ns

MT53E512 Series

Part	Supplier Device Package	Package / Case	Memory Format	Memory Organization [custom]	Memory Organization [custom]	Mounting Type	Technology	Write Cycle Time - Word, Page	Memory Size	Clock Frequency	Memory Organization	Supplier Device Package [y]	Supplier Device Package [x]	Memory Type	Qualification	Memory Interface	Voltage - Supply [Min]	Voltage - Supply [Max]	Grade	Access Time	Operating Temperature [Max]	Operating Temperature [Min]	Voltage - Supply
Micron Technology Inc. MT53E512M32D2FW-046 WT:D TR	200-TFBGA (10x14.5)	200-TFBGA	DRAM	32	512 M	Surface Mount	SDRAM - Mobile LPDDR4
Micron Technology Inc. MT53E512M64D2HJ-046 AUT:B TR	556-WFBGA		DRAM			Surface Mount	SDRAM - Mobile LPDDR4X	18 ns	4 MB	2.133 GHz	512M x 64	12.4	12.4	Volatile	AEC-Q100	Parallel	1.06 V	1.17 V	Automotive	3.5 ns	125 °C	-40 °C
Micron Technology Inc. MT53E512M32D2NP-046 WT:E	200-WFBGA (10x14.5)	200-WFBGA	DRAM	32	512 M	Surface Mount	SDRAM - Mobile LPDDR4			2.133 GHz				Volatile							85 °C	-30 °C	1.1 V
Micron Technology Inc. MT53E512M32D1ZW-046 AAT:B	200-TFBGA (10x14.5)	200-TFBGA	DRAM	32	512 M	Surface Mount	SDRAM - Mobile LPDDR4X	18 ns		2.133 GHz				Volatile	AEC-Q100	Parallel	1.06 V	1.17 V	Automotive	3.5 ns	105 °C	-40 °C
Micron Technology Inc. MT53E512M32D2NP-053 RS WT:H TR	200-WFBGA (10x14.5)	200-WFBGA	DRAM	32	512 M	Surface Mount	SDRAM - Mobile LPDDR4
Micron Technology Inc. MT53E512M32D1ZW-046 AIT:B TR	200-TFBGA (10x14.5)	200-TFBGA	DRAM	32	512 M	Surface Mount	SDRAM - Mobile LPDDR4X	18 ns		2.133 GHz				Volatile	AEC-Q100	Parallel	1.06 V	1.17 V	Automotive	3.5 ns	95 °C	-40 °C
Micron Technology Inc. MT53E512M64D4NK-046 WT:D	366-WFBGA (15x15)	366-WFBGA	DRAM			Surface Mount	SDRAM - Mobile LPDDR4		4 MB	2.133 GHz	512M x 64			Volatile							85 °C	-30 °C	1.1 V
Micron Technology Inc. MT53E512M64D2HJ-046 WT:B	556-WFBGA		DRAM			Surface Mount	SDRAM - Mobile LPDDR4	18 ns	4 MB	2.133 GHz	512M x 64	12.4	12.4	Volatile		Parallel	1.06 V	1.17 V		3.5 ns	85 °C	-25 °C
Micron Technology Inc. MT53E512M32D1ZW-046 IT:B TR	200-TFBGA (10x14.5)	200-TFBGA	DRAM	32	512 M	Surface Mount	SDRAM - Mobile LPDDR4	18 ns		2.133 GHz				Volatile		Parallel	1.06 V	1.17 V		3.5 ns	95 °C	-40 °C
Micron Technology Inc. MT53E512M32D2NP-053 WT:E	200-WFBGA (10x14.5)	200-WFBGA	DRAM	32	512 M	Surface Mount	SDRAM - Mobile LPDDR4

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 59.63
	Tray	1360	$ 21.43
Newark	Each	1	$ 24.42

Description

General part information

MT53E512 Series

SDRAM - Mobile LPDDR4 Memory IC 32Gbit Parallel 2.133 GHz 3.5 ns 556-WFBGA (12.4x12.4)

Documents

Technical documentation and resources

No documents available