Discrete Semiconductor Products

IRFR9014TRPBF-BE3

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MOSFET P-CH 60V 5.1A DPAK

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Discrete Semiconductor Products

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MOSFET P-CH 60V 5.1A DPAK

Technical Specifications

Parameters and characteristics for this part

Specification	IRFR9014TRPBF-BE3

Current - Continuous Drain (Id) @ 25°C	5.1 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	12 nC
Input Capacitance (Ciss) (Max) @ Vds	270 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max)	25 W, 2.5 W
Rds On (Max) @ Id, Vgs	500 mOhm
Supplier Device Package	TO-252AA
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Package / Case	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs	Mounting Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs(th) (Max) @ Id	FET Type	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Technology	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max)	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C
Vishay General Semiconductor - Diodes Division IRFR9014TRR	DPAK (2 Leads + Tab) SC-63 TO-252-3	DPAK	-55 °C	150 °C	500 mOhm	Surface Mount	12 nC	4 V	P-Channel	20 V	10 V	MOSFET (Metal Oxide)	270 pF	2.5 W 25 W	60 V	5.1 A
Vishay General Semiconductor - Diodes Division IRFR9014TRL	DPAK (2 Leads + Tab) SC-63 TO-252-3	DPAK	-55 °C	150 °C	500 mOhm	Surface Mount	12 nC	4 V	P-Channel	20 V	10 V	MOSFET (Metal Oxide)	270 pF	2.5 W 25 W	60 V	5.1 A
Vishay General Semiconductor - Diodes Division IRFR9014TRPBF	DPAK (2 Leads + Tab) SC-63 TO-252-3	DPAK	-55 °C	150 °C	500 mOhm	Surface Mount	12 nC	4 V	P-Channel	20 V	10 V	MOSFET (Metal Oxide)	270 pF	2.5 W 25 W	60 V	5.1 A
Vishay General Semiconductor - Diodes Division IRFR9014TRPBF-BE3	DPAK (2 Leads + Tab) SC-63 TO-252-3	TO-252AA	-55 °C	150 °C	500 mOhm	Surface Mount	12 nC	4 V	P-Channel	20 V	10 V	MOSFET (Metal Oxide)	270 pF	2.5 W 25 W	60 V	5.1 A
Vishay General Semiconductor - Diodes Division IRFR9014NTRR	DPAK (2 Leads + Tab) SC-63 TO-252-3	DPAK	-55 °C	150 °C	500 mOhm	Surface Mount	12 nC	4 V	P-Channel	20 V	10 V	MOSFET (Metal Oxide)	270 pF	2.5 W 25 W	60 V	5.1 A

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

P-Channel 60 V 5.1A (Tc) 2.5W (Ta), 25W (Tc) Surface Mount TO-252AA

Technical documentation and resources