IRFR9014 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
MOSFET P-CH 60V 5.1A DPAK
| Part | Package / Case | Supplier Device Package | Operating Temperature [Min] | Operating Temperature [Max] | Rds On (Max) @ Id, Vgs | Mounting Type | Gate Charge (Qg) (Max) @ Vgs [Max] | Vgs(th) (Max) @ Id | FET Type | Vgs (Max) | Drive Voltage (Max Rds On, Min Rds On) | Technology | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation (Max) | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Vishay General Semiconductor - Diodes Division | DPAK (2 Leads + Tab) SC-63 TO-252-3 | DPAK | -55 °C | 150 °C | 500 mOhm | Surface Mount | 12 nC | 4 V | P-Channel | 20 V | 10 V | MOSFET (Metal Oxide) | 270 pF | 2.5 W 25 W | 60 V | 5.1 A |
Vishay General Semiconductor - Diodes Division | DPAK (2 Leads + Tab) SC-63 TO-252-3 | DPAK | -55 °C | 150 °C | 500 mOhm | Surface Mount | 12 nC | 4 V | P-Channel | 20 V | 10 V | MOSFET (Metal Oxide) | 270 pF | 2.5 W 25 W | 60 V | 5.1 A |
Vishay General Semiconductor - Diodes Division | DPAK (2 Leads + Tab) SC-63 TO-252-3 | DPAK | -55 °C | 150 °C | 500 mOhm | Surface Mount | 12 nC | 4 V | P-Channel | 20 V | 10 V | MOSFET (Metal Oxide) | 270 pF | 2.5 W 25 W | 60 V | 5.1 A |
Vishay General Semiconductor - Diodes Division | DPAK (2 Leads + Tab) SC-63 TO-252-3 | TO-252AA | -55 °C | 150 °C | 500 mOhm | Surface Mount | 12 nC | 4 V | P-Channel | 20 V | 10 V | MOSFET (Metal Oxide) | 270 pF | 2.5 W 25 W | 60 V | 5.1 A |
Vishay General Semiconductor - Diodes Division | DPAK (2 Leads + Tab) SC-63 TO-252-3 | DPAK | -55 °C | 150 °C | 500 mOhm | Surface Mount | 12 nC | 4 V | P-Channel | 20 V | 10 V | MOSFET (Metal Oxide) | 270 pF | 2.5 W 25 W | 60 V | 5.1 A |