2N6351
Active150V 5W 1A NPN POWER BJT THT TO-33 ROHS COMPLIANT: YES
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2N6351
Active150V 5W 1A NPN POWER BJT THT TO-33 ROHS COMPLIANT: YES
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Technical Specifications
Parameters and characteristics for this part
| Specification | 2N6351 |
|---|---|
| Current - Collector (Ic) (Max) | 5 A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 1000 hFE |
| Mounting Type | Through Hole |
| Package / Case | TO-205AC, TO-33-4 Metal Can |
| Power - Max [Max] | 1 W |
| Supplier Device Package | TO-33 |
| Vce Saturation (Max) @ Ib, Ic [Max] | 2.5 V |
| Voltage - Collector Emitter Breakdown (Max) | 150 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Bulk | 100 | $ 30.10 | |
| Microchip Direct | N/A | 1 | $ 32.41 | |
| Newark | Each | 100 | $ 30.10 | |
| 500 | $ 28.94 | |||
Description
General part information
2N6351-Darlington Series
This specification covers the performance requirements for NPN silicon power Darlington, 2N6350, 2N6351, 2N6352 and 2N6353 transistors. Three levels of product assurance (JAN, JANTX and JANTXV) are provided for each encapsulated device type as specified in MIL-PRF-19500/472. One level of product assurance (JANHC) is provided for each unencapsulated device type as specified in MIL-PRF-19500/472. The device package outlines are as follows: 4-pin TO–33 for device types 2N6350 and 2N6351 and 3-pin TO–66 for device types 2N6352 and 2N6353.
Documents
Technical documentation and resources