Discrete Semiconductor Products

IXFH32N100X

Active

Littelfuse/Commercial Vehicle Products

DISCMSFT NCH ULTRJNCTN XCLASS TO-247AD/ TUBE

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Discrete Semiconductor Products

IXFH32N100X

Active

Littelfuse/Commercial Vehicle Products

DISCMSFT NCH ULTRJNCTN XCLASS TO-247AD/ TUBE

Deep-Dive with AI

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IXFH32N100X

Current - Continuous Drain (Id) @ 25°C	32 A
Drain to Source Voltage (Vdss)	1000 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	130 nC
Input Capacitance (Ciss) (Max) @ Vds	4075 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3
Power Dissipation (Max)	890 W
Rds On (Max) @ Id, Vgs	220 mOhm
Supplier Device Package	TO-247
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	6 V

IXFH32N100X Series

DiscMSFT NCh UltrJnctn XClass TO-247AD

Part	Vgs (Max)	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs [Max]	Rds On (Max) @ Id, Vgs	Supplier Device Package	Package / Case	Technology	Mounting Type	Power Dissipation (Max)
Littelfuse/Commercial Vehicle Products IXFH32N100X	30 V	N-Channel	10 V	1000 V	6 V	32 A	-55 °C	150 °C	4075 pF	130 nC	220 mOhm	TO-247	TO-247-3	MOSFET (Metal Oxide)	Through Hole	890 W

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	1	$ 15.17
		30	$ 13.83
LCSC	Piece	1	$ 5.38
		210	$ 2.15
		510	$ 2.07
		990	$ 2.04
Newark	Each	250	$ 15.61
		250	$ 15.61
		500	$ 14.50
		500	$ 14.50

Description

General part information

IXFH32N100X Series

Ultra-Junction X-Class Power MOSFETs with fast body diodes are rugged devices that display the lowest on-state resistances in the industry, enabling very high power density in high-voltage power conversion applications. Developed using the charge compensation principle and proprietary process technology, these devices exhibit low gate charges and superior dv/dt performance. In addition, thanks to the fast soft-recovery body diode, these Ultra-Junction MOSFETs help reduce switching losses and electromagnetic interference (EMI). Advantages: Higher efficiency High power density Easy to mount Space savings

Documents

Technical documentation and resources

No documents available