IXFH32N100X Series

DiscMSFT NCh UltrJnctn XClass TO-247AD

Manufacturer: Littelfuse/Commercial Vehicle Products

Catalog

DiscMSFT NCh UltrJnctn XClass TO-247AD

Part	Vgs (Max)	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs [Max]	Rds On (Max) @ Id, Vgs	Supplier Device Package	Package / Case	Technology	Mounting Type	Power Dissipation (Max)
Littelfuse/Commercial Vehicle Products IXFH32N100X	30 V	N-Channel	10 V	1000 V	6 V	32 A	-55 °C	150 °C	4075 pF	130 nC	220 mOhm	TO-247	TO-247-3	MOSFET (Metal Oxide)	Through Hole	890 W

Catalog

DiscMSFT NCh UltrJnctn XClass TO-247AD

Key Features

• Ultra low on-resistance RDS(ON)and gate charge Qg

• Fast body diode

• dv/dt ruggedness

• Avalanche rated

• Low package inductance

• International standard packages

Description

Ultra-Junction X-Class Power MOSFETs with fast body diodes are rugged devices that display the lowest on-state resistances in the industry, enabling very high power density in high-voltage power conversion applications. Developed using the charge compensation principle and proprietary process technology, these devices exhibit low gate charges and superior dv/dt performance. In addition, thanks to the fast soft-recovery body diode, these Ultra-Junction MOSFETs help reduce switching losses and electromagnetic interference (EMI). Advantages: Higher efficiency High power density Easy to mount Space savings