Specification	FDMS9600S

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C [Max]	16 A
Current - Continuous Drain (Id) @ 25°C [Min]	12 A
Drain to Source Voltage (Vdss)	30 V
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs	13 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	1705 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerWDFN
Power - Max [Max]	1 W
Rds On (Max) @ Id, Vgs	8.5 mOhm
Supplier Device Package	8-MLP (5x6), Power56
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	3 V

FDMS9600S Series

Dual N-Channel PowerTrench® MOSFET 30V

Part	Operating Temperature [Min]	Operating Temperature [Max]	Vgs(th) (Max) @ Id	FET Feature	Input Capacitance (Ciss) (Max) @ Vds [Max]	Gate Charge (Qg) (Max) @ Vgs	Supplier Device Package	Power - Max [Max]	Drain to Source Voltage (Vdss)	Mounting Type	Rds On (Max) @ Id, Vgs	Package / Case	Current - Continuous Drain (Id) @ 25°C [Max]	Current - Continuous Drain (Id) @ 25°C [Min]	Configuration	Technology
ON Semiconductor FDMS9600S	-55 °C	150 °C	3 V	Logic Level Gate	1705 pF	13 nC	8-MLP (5x6) Power56	1 W	30 V	Surface Mount	8.5 mOhm	8-PowerWDFN	16 A	12 A	2 N-Channel (Dual)	MOSFET (Metal Oxide)

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

FDMS9600S Series

This device includes two specialized MOSFETs in a unique dual Power 56 package. It is designed to provide an optimal Synchronous Buck power stage in terms of efficiency and PCB utilization. The low switching loss high-side MOSFET is complemented by a low conduction loss low-side SyncFET™.