GANB4R8-040CBAZ
ActiveGAN FETS 40 V, 8.0 MOHM BI-DIRECTIONAL GALLIUM NITRIDE (GAN) FET IN A 1.7 MM X 1.7 MM WAFER LEVEL CHIP-SCALE PACKAGE (WLCSP)
Deep-Dive with AI
Search across all available documentation for this part.
GANB4R8-040CBAZ
ActiveGAN FETS 40 V, 8.0 MOHM BI-DIRECTIONAL GALLIUM NITRIDE (GAN) FET IN A 1.7 MM X 1.7 MM WAFER LEVEL CHIP-SCALE PACKAGE (WLCSP)
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | GANB4R8-040CBAZ |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 20 A |
| Drain to Source Voltage (Vdss) | 40 V |
| Drive Voltage (Max Rds On, Min Rds On) | 5 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 15.8 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 887 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 125 °C |
| Operating Temperature [Min] | -40 C |
| Package / Case | WLCSP, 22-UFBGA |
| Power Dissipation (Max) | 13 W |
| Rds On (Max) @ Id, Vgs | 4.8 mOhm |
| Supplier Device Package | 22-WLCSP (2.1x2.1) |
| Technology | GaNFET (Gallium Nitride) |
| Vgs (Max) [Max] | 40 V |
| Vgs(th) (Max) @ Id | 2.4 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
GANB4R8-040CBA Series
The GANB4R8-040CBA is a 40 V, 4.8 mΩ bi-directional Gallium Nitride (GaN) High Electron-Mobility-Transistor (HEMT) in a Wafer Level Chip-Scale (WLCSP) package. It is a normally-off e-mode device offering superior performance.
Documents
Technical documentation and resources