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GANB4R8-040CBAZActive
Nexperia USA Inc.
GAN FETS 40 V, 8.0 MOHM BI-DIRECTIONAL GALLIUM NITRIDE (GAN) FET IN A 1.7 MM X 1.7 MM WAFER LEVEL CHIP-SCALE PACKAGE (WLCSP)
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GANB4R8-040CBAZ Datasheet (PDF)
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