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TJ15S06M3L - High-Speed, Low-Loss Solutions | Toshiba MOSFETs, P-ch MOSFET, -60 V, -15 A, 0.05 Ω@10V, DPAK+
Discrete Semiconductor Products

TK55S10N1,LXHQ

Active
Toshiba Semiconductor and Storage

12V - 300V MOSFETS, N-CH MOSFET, 100 V, 55 A, 0.0065 Ω@10V, DPAK+

TJ15S06M3L - High-Speed, Low-Loss Solutions | Toshiba MOSFETs, P-ch MOSFET, -60 V, -15 A, 0.05 Ω@10V, DPAK+
Discrete Semiconductor Products

TK55S10N1,LXHQ

Active
Toshiba Semiconductor and Storage

12V - 300V MOSFETS, N-CH MOSFET, 100 V, 55 A, 0.0065 Ω@10V, DPAK+

Technical Specifications

Parameters and characteristics for this part

SpecificationTK55S10N1,LXHQ
Current - Continuous Drain (Id) @ 25°C55 A
Drain to Source Voltage (Vdss)100 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]49 nC
GradeAutomotive
Input Capacitance (Ciss) (Max) @ Vds3280 pF
Mounting TypeSurface Mount
Operating Temperature175 °C
Package / CaseTO-252-3, SC-63, DPAK (2 Leads + Tab)
Power Dissipation (Max)157 W
QualificationAEC-Q101
Rds On (Max) @ Id, Vgs6.5 mOhm
Supplier Device PackageDPAK+
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id [Max]4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 1.57
10$ 1.01
100$ 0.68
500$ 0.61
Digi-Reel® 1$ 1.57
10$ 1.01
100$ 0.68
500$ 0.61
N/A 2395$ 2.05
Tape & Reel (TR) 2000$ 0.61

Description

General part information

TK55S10N1 Series

N-Channel 100 V 55A (Ta) 157W (Tc) Surface Mount DPAK+

Documents

Technical documentation and resources

Efficiency Evaluation and Loss Analysis of 300W isolated DC-DC converter

Application Note

Parasitic Oscillation and Ringing: Power MOSFET Application Notes

Application Note

U-MOSⅨ-H 60V Low VDS spike TPH1R306P1

Application Note

TK55S10N1 Data sheet/Japanese

Data sheet

Electrical Characteristics: Power MOSFET Application Notes

Application Note

Power Factor Correction (PFC) Circuits: Power MOSFET Application Notes

Application Note

Resonant Circuits and Soft Switching

Application Note

Quick Reference Guide for Thermal Design for Discrete Semiconductor Devices

Application Note

MOSFET Secondary Breakdown

Application Note

Discrete Semiconductor Devices Hints and Tips for Thermal Design Part 2

Application Note

TK55S10N1 Data sheet/English

Data sheet

MOSFET SPICE model grade

Application Note

Structures and Characteristics: Power MOSFET Application Notes

Application Note

MOSFET Avalanche Ruggedness: Power MOSFET Application Notes

Application Note

Parasitic Oscillation between Parallel Power MOSFETs: Power MOSFET Application Notes

Application Note

MOSFET Self-Turn-On Phenomenon

Application Note

Derating of the MOSFET Safe Operating Area

Application Note

Thermal Design and Attachment of a Thermal Fin: Power MOSFET Application Notes

Application Note

Reverse Recovery Operation and Destruction of MOSFET Body Diode

Application Note

Motor Control (Vacuum Cleaners)

Application Note

Quick Reference Guide for Thermal Design for Power Semiconductor SMD type: Part 2

Application Note

RC Snubbers for Step-Down Converters

Application Note

Impacts of the dv/dt Rate on MOSFETs: Power MOSFET Application Notes

Application Note

Selection Guide MOSFETs 2025 Rev1.0

Catalog

MOSFET Gate Drive Circuit: Power MOSFET Application Notes

Application Note

Hints and Tips for Thermal Design for Discrete Semiconductor Devices

Application Note

Calculating the Temperature of Discrete Semiconductor Devices

Application Note

Simplified CFD Model Application Note

Application Note

Efficiency evaluation of Half-bridge DC-DC converter supporting 48V Bus system

Application Note

Maximum Ratings: Power MOSFET Application Notes

Application Note

Selecting MOSFETs and Consideration for Circuit Design: Power MOSFET Application Notes

Application Note

Hints and Tips for Thermal Design part3

Application Note

Avalanche energy calculation

Application Note

Term of Use Statement

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