TK55S10N1 Series
Manufacturer: Toshiba Semiconductor and Storage
Beta
⌘K
12V - 300V MOSFETS, N-CH MOSFET, 100 V, 55 A, 0.0065 Ω@10V, DPAK+
| Part | Package / Case | Drain to Source Voltage (Vdss) | Gate Charge (Qg) (Max) @ Vgs [Max] | Current - Continuous Drain (Id) @ 25°C | FET Type | Mounting Type | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id [Max] | Operating Temperature | Power Dissipation (Max) | Drive Voltage (Max Rds On, Min Rds On) | Technology | Input Capacitance (Ciss) (Max) @ Vds | Supplier Device Package | Vgs (Max) | Qualification | Grade |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Toshiba Semiconductor and Storage | DPAK (2 Leads + Tab) SC-63 TO-252-3 | 100 V | 49 nC | 55 A | N-Channel | Surface Mount | 6.5 mOhm | 4 V | 175 °C | 157 W | 10 V | MOSFET (Metal Oxide) | 3280 pF | DPAK+ | 20 V | ||
 Toshiba Semiconductor and Storage | DPAK (2 Leads + Tab) SC-63 TO-252-3 | 100 V | 49 nC | 55 A | N-Channel | Surface Mount | 6.5 mOhm | 4 V | 175 °C | 157 W | 10 V | MOSFET (Metal Oxide) | 3280 pF | DPAK+ | 20 V | AEC-Q101 | Automotive |