Discrete Semiconductor Products

SIDR390DP-T1-GE3

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MOSFET N-CH 30V 69.9A/100A PPAK

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Discrete Semiconductor Products

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MOSFET N-CH 30V 69.9A/100A PPAK

Technical Specifications

Parameters and characteristics for this part

Specification	SIDR390DP-T1-GE3

Current - Continuous Drain (Id) @ 25°C	100 A
Current - Continuous Drain (Id) @ 25°C	69.9 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	153 nC
Input Capacitance (Ciss) (Max) @ Vds	10180 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	PowerPAK® SO-8
Power Dissipation (Max)	6.25 W, 125 W
Rds On (Max) @ Id, Vgs	0.8 mOhm
Supplier Device Package	PowerPAK® SO-8DC
Technology	MOSFET (Metal Oxide)
Vgs (Max)	-16 V, 20 V
Vgs(th) (Max) @ Id	2 V

Part	Mounting Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Technology	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max)	Supplier Device Package	Rds On (Max) @ Id, Vgs	FET Type	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Input Capacitance (Ciss) (Max) @ Vds
Vishay General Semiconductor - Diodes Division SIDR390DP-T1-GE3	Surface Mount	153 nC	MOSFET (Metal Oxide)	2 V	4.5 V 10 V	6.25 W 125 W	PowerPAK® SO-8DC	0.8 mOhm	N-Channel	-16 V 20 V	100 A	69.9 A	30 V	-55 °C	150 °C	PowerPAK® SO-8	10180 pF

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 30 V 69.9A (Ta), 100A (Tc) 6.25W (Ta), 125W (Tc) Surface Mount PowerPAK® SO-8DC

Technical documentation and resources