SIDR390 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
Beta
⌘K
MOSFET N-CH 30V 69.9A/100A PPAK
| Part | Mounting Type | Gate Charge (Qg) (Max) @ Vgs [Max] | Technology | Vgs(th) (Max) @ Id | Drive Voltage (Max Rds On, Min Rds On) | Power Dissipation (Max) | Supplier Device Package | Rds On (Max) @ Id, Vgs | FET Type | Vgs (Max) | Current - Continuous Drain (Id) @ 25°C | Current - Continuous Drain (Id) @ 25°C | Drain to Source Voltage (Vdss) | Operating Temperature [Min] | Operating Temperature [Max] | Package / Case | Input Capacitance (Ciss) (Max) @ Vds |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Vishay General Semiconductor - Diodes Division | Surface Mount | 153 nC | MOSFET (Metal Oxide) | 2 V | 4.5 V 10 V | 6.25 W 125 W | PowerPAK® SO-8DC | 0.8 mOhm | N-Channel | -16 V 20 V | 100 A | 69.9 A | 30 V | -55 °C | 150 °C | PowerPAK® SO-8 | 10180 pF |