Discrete Semiconductor Products

RJK5002DPD-00#J2

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NCH POWER MOSFET 500V 2.4A 5000MOHM TO-252 / DPAK

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Discrete Semiconductor Products

Active

NCH POWER MOSFET 500V 2.4A 5000MOHM TO-252 / DPAK

Technical Specifications

Parameters and characteristics for this part

Specification	RJK5002DPD-00#J2

Current - Continuous Drain (Id) @ 25°C	2.4 A
Drain to Source Voltage (Vdss)	500 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	6.7 nC
Input Capacitance (Ciss) (Max) @ Vds	165 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Rds On (Max) @ Id, Vgs	5 Ohm
Supplier Device Package	MP-3A
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V

Nch Power MOSFET 500V 2.4A 5000mohm TO-252 / DPAK

Part	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	Technology	Operating Temperature	Supplier Device Package	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Gate Charge (Qg) (Max) @ Vgs	FET Type	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Package / Case
Renesas Electronics Corporation RJK5002DPD-00#J2	30 V	165 pF	MOSFET (Metal Oxide)	150 °C	MP-3A	5 Ohm	10 V	Surface Mount	6.7 nC	N-Channel	2.4 A	500 V	DPAK (2 Leads + Tab) SC-63 TO-252-3

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 1.93
	Digi-Reel®	1	$ 1.93
	Tape & Reel (TR)	3000	$ 0.50

General part information

MOSFETs suitable for switching (motor drive, etc.) and load switch applications. Low on-resistance, high-speed switching, and high-robustness.

Technical documentation and resources