Discrete Semiconductor Products

CSD18543Q3AT

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60-V, N CHANNEL NEXFET™ POWER MOSFET, SINGLE SON 3 MM X 3 MM, 9.9 MOHM

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DocumentsRinging Reduction Techniques for NexFET High Performance MOSFETs Semiconductor and IC Package Thermal Metrics (Rev. D)+7

Discrete Semiconductor Products

CSD18543Q3AT

Active

Texas Instruments

60-V, N CHANNEL NEXFET™ POWER MOSFET, SINGLE SON 3 MM X 3 MM, 9.9 MOHM

Deep-Dive with AI

DocumentsRinging Reduction Techniques for NexFET High Performance MOSFETs Semiconductor and IC Package Thermal Metrics (Rev. D)+7

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	CSD18543Q3AT

Current - Continuous Drain (Id) @ 25°C	12 A, 60 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	14.5 nC
Input Capacitance (Ciss) (Max) @ Vds	1150 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerVDFN
Power Dissipation (Max)	66 W
Rds On (Max) @ Id, Vgs	15.6 mOhm
Supplier Device Package	8-VSONP (3x3.3)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.7 V

CSD18543Q3A Series

60-V, N channel NexFET™ power MOSFET, single SON 3 mm x 3 mm, 9.9 mOhm

Part	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Mounting Type	Technology	Power Dissipation (Max)	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs	FET Type	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	Vgs(th) (Max) @ Id	Package / Case	Rds On (Max) @ Id, Vgs
Texas Instruments CSD18543Q3AT	4.5 V 10 V	12 A 60 A	8-VSONP (3x3.3)	Surface Mount	MOSFET (Metal Oxide)	66 W	60 V	-55 °C	150 °C	14.5 nC	N-Channel	1150 pF	20 V	2.7 V	8-PowerVDFN	15.6 mOhm

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 1.53
		10	$ 1.25
		100	$ 0.98
	Digi-Reel®	1	$ 1.53
		10	$ 1.25
		100	$ 0.98
	Tape & Reel (TR)	250	$ 0.97
		500	$ 0.83
		1250	$ 0.67
		2500	$ 0.63
		6250	$ 0.60
		12500	$ 0.58
Texas Instruments	SMALL T&R	1	$ 1.14
		100	$ 0.87
		250	$ 0.64
		1000	$ 0.46

Description

General part information

CSD18543Q3A Series

This 60-V, 8.1-mΩ, SON 3.3-mm × 3.3-mm NexFET™ power MOSFET is designed to minimize losses in power conversion applications.

Documents

Technical documentation and resources

CSD18543Q3AT

Deep-Dive with AI

CSD18543Q3AT

Deep-Dive with AI

Technical Specifications

CSD18543Q3A Series

Pricing

Description

CSD18543Q3A Series

Documents

Ringing Reduction Techniques for NexFET High Performance MOSFETs

Semiconductor and IC Package Thermal Metrics (Rev. D)

Improve DC/DC Regulator EMI for Free with Optimized Power Stage Layout

QFN and SON PCB Attachment (Rev. C)

Using MOSFET Transient Thermal Impedance Curves In Your Design

Tips for Successfully Paralleling Power MOSFETs

MOSFET Support and Training Tools (Rev. F)

Using MOSFET Safe Operating Area Curves in Your Design

CSD18543Q3A 60-V N-Channel NexFET™ Power MOSFET datasheet

CSD18543Q3A Series