Specification	FDMC8026S

Current - Continuous Drain (Id) @ 25°C	19 A, 21 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	52 nC
Input Capacitance (Ciss) (Max) @ Vds	3165 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerWDFN
Power Dissipation (Max)	36 W, 2.4 W
Rds On (Max) @ Id, Vgs	4.4 mOhm
Supplier Device Package	8-MLP (3.3x3.3)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3 V

FDMC8026S Series

N-Channel PowerTrench® SyncFET™ 30V, 21A, 4.4mΩ

Part	Vgs (Max)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs	FET Type	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package	Drain to Source Voltage (Vdss)	Mounting Type	Package / Case	Technology	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max)	Operating Temperature [Min]	Operating Temperature [Max]
ON Semiconductor FDMC8026S	20 V	4.4 mOhm	3 V	19 A 21 A	52 nC	N-Channel	3165 pF	8-MLP (3.3x3.3)	30 V	Surface Mount	8-PowerWDFN	MOSFET (Metal Oxide)	4.5 V 10 V	2.4 W 36 W	-55 °C	150 °C

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

FDMC8026S Series

The FDMC8026S has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on)while maintaining excellent switching performance.This device has the added benefit of an efficient monolithic schottky body diode.