STD10NF10T4
ActiveN-CHANNEL 100 V, 0.115 OHM TYP., 13 A STRIPFET II POWER MOSFET IN A DPAK PACKAGE
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STD10NF10T4
ActiveN-CHANNEL 100 V, 0.115 OHM TYP., 13 A STRIPFET II POWER MOSFET IN A DPAK PACKAGE
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Technical Specifications
Parameters and characteristics for this part
| Specification | STD10NF10T4 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 13 A |
| Drain to Source Voltage (Vdss) | 100 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 21 nC |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 460 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 175 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-252-3, SC-63, DPAK (2 Leads + Tab) |
| Power Dissipation (Max) | 50 W |
| Rds On (Max) @ Id, Vgs | 130 mOhm |
| Supplier Device Package | DPAK |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 4 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
STD10NF10T4 Series
This Power MOSFET series realized with STMicroelectronics unique STripFET™ process is specifically designed to minimize input capacitance and gate charge. It is therefore ideal as a primary switch in advanced high-efficiency isolated DC-DC converters for Telecom and Computer applications. It is also suitable for any application with low gate charge drive requirements.
Documents
Technical documentation and resources