
SST25WF040B-40E/SN
Active4MB 1.65-1.95V SPI SERIAL FLASH
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SST25WF040B-40E/SN
Active4MB 1.65-1.95V SPI SERIAL FLASH
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Technical Specifications
Parameters and characteristics for this part
| Specification | SST25WF040B-40E/SN |
|---|---|
| Clock Frequency | 40 MHz |
| Memory Format | FLASH |
| Memory Interface | SPI |
| Memory Organization | 512 K |
| Memory Size | 512 kb |
| Memory Type | Non-Volatile |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 125 °C |
| Operating Temperature [Min] | -40 °C |
| Package / Case | 8-SOIC |
| Package / Case [x] | 0.154 in |
| Package / Case [y] | 3.9 mm |
| Supplier Device Package | 8-SOIC |
| Technology | FLASH |
| Voltage - Supply [Max] | 1.95 V |
| Voltage - Supply [Min] | 1.65 V |
| Write Cycle Time - Word, Page | 1 ms |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Tube | 600 | $ 1.27 | |
| Microchip Direct | TUBE | 1 | $ 1.31 | |
| 25 | $ 1.28 | |||
| 100 | $ 1.23 | |||
| 1000 | $ 1.14 | |||
| 5000 | $ 1.10 | |||
Description
General part information
SST25WF040B Series
SST25WF040B is a member of the Serial Flash 25 Series family and feature a four-wire, SPI-compatible interface that allows for a low pin-count package which occupies less board space and ultimately lowers total system costs. SPI serial flash memory is manufactured with proprietary, high-performance CMOS SuperFlash technology. The split-gate cell design and thick-oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches.
This Serial Flash significantly improve performance and reliability, while lowering power consumption. The device writes (Program or Erase) with a single power supply of 1.65-1.95V. The total energy consumed is a function of the applied voltage, current, and time of application. Since for any given voltage range, the SuperFlash technology uses less current to program and has a shorter erase time, the total energy consumed during any Erase or Program operation is less than alternative flash memory technologies.
Documents
Technical documentation and resources