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TO-39 TO-205AD
Discrete Semiconductor Products

JANTXV2N1711S

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Microchip Technology

NPN SILICON LOW-POWER 30V TO 60V, 0.5A

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Documents2N1711 2N1890
TO-39 TO-205AD
Discrete Semiconductor Products

JANTXV2N1711S

Active
Microchip Technology

NPN SILICON LOW-POWER 30V TO 60V, 0.5A

Deep-Dive with AI

Documents2N1711 2N1890

Technical Specifications

Parameters and characteristics for this part

SpecificationJANTXV2N1711S
Current - Collector (Ic) (Max) [Max]500 mA
Current - Collector Cutoff (Max) [Max]0.01 µA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]100
GradeMilitary
Mounting TypeThrough Hole
Package / CaseTO-39-3 Metal Can, TO-205AD
Power - Max [Max]800 mW
QualificationMIL-PRF-19500/225
Supplier Device PackageTO-39 (TO-205AD)
Transistor TypeNPN
Vce Saturation (Max) @ Ib, Ic1.5 V
Voltage - Collector Emitter Breakdown (Max) [Max]30 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyBulk 100$ 74.36
Microchip DirectN/A 1$ 80.08
NewarkEach 100$ 74.36
500$ 71.50

Description

General part information

JANTXV2N1711S-Transistor Series

This specification covers the performance requirements for NPN, silicon, low-power, 2N1711 and 2N1890 transistors. Three levels of product assurance (JAN, JANTX and JANTXV) are provided for each device type as specified in MIL-PRF-19500/225.

Documents

Technical documentation and resources