Discrete Semiconductor Products

NTY100N10

Obsolete

MOSFET N-CH 100V 123A TO264

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

MOSFET N-CH 100V 123A TO264

Technical Specifications

Parameters and characteristics for this part

Specification	NTY100N10

Current - Continuous Drain (Id) @ 25°C	123 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	350 nC
Input Capacitance (Ciss) (Max) @ Vds	10110 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-264AA, TO-264-3
Power Dissipation (Max) [Max]	313 W
Rds On (Max) @ Id, Vgs	10 mOhm
Supplier Device Package	TO-264
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Power MOSFET 100 V, 123 A, N-Channel Enhancement-Mode TO264

Part	Gate Charge (Qg) (Max) @ Vgs	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds	FET Type	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Power Dissipation (Max) [Max]	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Technology	Vgs (Max)	Vgs(th) (Max) @ Id	Mounting Type
ON Semiconductor NTY100N10G	350 nC	TO-264	123 A	-55 °C	150 °C	10110 pF	N-Channel	10 mOhm	100 V	313 W	TO-264-3 TO-264AA	10 V	MOSFET (Metal Oxide)	20 V	4 V	Through Hole
ON Semiconductor NTY100N10	350 nC	TO-264	123 A	-55 °C	150 °C	10110 pF	N-Channel	10 mOhm	100 V	313 W	TO-264-3 TO-264AA	10 V	MOSFET (Metal Oxide)	20 V	4 V	Through Hole

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Power MOSFET 100 V, 123 A, N-Channel Enhancement-Mode TO264

Technical documentation and resources