NT100N10 Series

Power MOSFET 100 V, 123 A, N-Channel Enhancement-Mode TO264

Catalog

Power MOSFET 100 V, 123 A, N-Channel Enhancement-Mode TO264

Part	Gate Charge (Qg) (Max) @ Vgs	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds	FET Type	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Power Dissipation (Max) [Max]	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Technology	Vgs (Max)	Vgs(th) (Max) @ Id	Mounting Type
ON Semiconductor NTY100N10G	350 nC	TO-264	123 A	-55 °C	150 °C	10110 pF	N-Channel	10 mOhm	100 V	313 W	TO-264-3 TO-264AA	10 V	MOSFET (Metal Oxide)	20 V	4 V	Through Hole
ON Semiconductor NTY100N10	350 nC	TO-264	123 A	-55 °C	150 °C	10110 pF	N-Channel	10 mOhm	100 V	313 W	TO-264-3 TO-264AA	10 V	MOSFET (Metal Oxide)	20 V	4 V	Through Hole

Power MOSFET 100 V, 123 A, N-Channel Enhancement-Mode TO264

• Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode

• Avalanche Energy Specified

• Idss and RDS(on)

• Pb-Free Package is Available

Power MOSFET 100 V, 123 A, N-Channel Enhancement-Mode TO264