2N5427

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POWER BJT TO-66 ROHS COMPLIANT: YES

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Discrete Semiconductor Products

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POWER BJT TO-66 ROHS COMPLIANT: YES

Technical Specifications

Parameters and characteristics for this part

Specification	2N5427

Current - Collector (Ic) (Max) [Max]	7 A
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	30
Mounting Type	Through Hole
Package / Case	TO-66-2, TO-213AA
Power - Max [Max]	40 W
Supplier Device Package	TO-66
Transistor Type	PNP
Voltage - Collector Emitter Breakdown (Max) [Max]	80 V

Part	Power - Max [Max]	Transistor Type	Package / Case	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Current - Collector (Ic) (Max) [Max]	Supplier Device Package	Voltage - Collector Emitter Breakdown (Max) [Max]	Mounting Type
Microchip Technology 2N5427	40 W	PNP	TO-213AA TO-66-2	30	7 A	TO-66	80 V	Through Hole

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bulk	100	$ 27.08
Newark	Each	100	$ 27.08
		500	$ 26.04

General part information

Bipolar (BJT) Transistor PNP 80 V 7 A 40 W Through Hole TO-66

Technical documentation and resources