Zenode.ai Logo
Beta
TO-39 TO-205AD
Discrete Semiconductor Products

JANKCC2N5339

Active
Microchip Technology

POWER BJT DIE ROHS COMPLIANT: YES

Deep-Dive with AI

Search across all available documentation for this part.

TO-39 TO-205AD
Discrete Semiconductor Products

JANKCC2N5339

Active
Microchip Technology

POWER BJT DIE ROHS COMPLIANT: YES

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationJANKCC2N5339
Current - Collector (Ic) (Max)5 A
Current - Collector Cutoff (Max) [Max]100 µA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]60
GradeMilitary
Mounting TypeThrough Hole
Operating Temperature [Max]200 C
Operating Temperature [Min]-55 °C
Package / CaseTO-39-3 Metal Can, TO-205AD
Power - Max [Max]1 W
QualificationMIL-PRF-19500/560
Supplier Device PackageTO-205AD
Supplier Device PackageTO-39
Transistor TypeNPN
Vce Saturation (Max) @ Ib, Ic1.2 V
Voltage - Collector Emitter Breakdown (Max) [Max]100 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTape & Reel (TR) 100$ 37.92
Microchip DirectN/A 1$ 40.84
NewarkEach 100$ 37.92
500$ 36.46

Description

General part information

JANKCC2N5339-Transistor-Die Series

This specification covers the performance requirements for NPN silicon switching, 2N5339 transistors. Four levels of product assurance (JAN, JANTX, JANTXV and JANS) are provided for each encapsulated device type as specified in MIL-PRF-19500/560 and two levels of product assurance (JANHC and JANKC) are provided for each unencapsulated device type as specified in MIL-PRF-19500/560. Provisions for radiation hardness assurance (RHA) to eight radiation levels is provided for JANS and JANKC product assurance levels. RHA level designators "M", "D", "P", "L", "R", "F", "G", and "H" are appended to the device prefix to identify devices, which have passed RHA requirements.

Documents

Technical documentation and resources