Specification	NVB25P06T4G

Current - Continuous Drain (Id) @ 25°C	27.5 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	50 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	1680 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max)	120 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	82 mOhm
Supplier Device Package	D2PAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	15 V
Vgs(th) (Max) @ Id	4 V

NVB25P06 Series

P-Channel Power MOSFET -60V, -27.5A, 82mΩ

Part	FET Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Rds On (Max) @ Id, Vgs	Grade	Vgs(th) (Max) @ Id	Package / Case	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	Qualification	Power Dissipation (Max)	Drain to Source Voltage (Vdss)	Technology	Operating Temperature [Min]	Operating Temperature [Max]
ON Semiconductor NVB25P06T4G	P-Channel	50 nC	10 V	27.5 A	Surface Mount	82 mOhm	Automotive	4 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	D2PAK	1680 pF	15 V	AEC-Q101	120 W	60 V	MOSFET (Metal Oxide)	-55 °C	175 ░C

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

NVB25P06 Series

Power MOSFET designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients. AEC-Q101 Qualified MOSFET.