NVB25P06 Series

P-Channel Power MOSFET -60V, -27.5A, 82mΩ

Catalog

P-Channel Power MOSFET -60V, -27.5A, 82mΩ

Part	FET Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Rds On (Max) @ Id, Vgs	Grade	Vgs(th) (Max) @ Id	Package / Case	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	Qualification	Power Dissipation (Max)	Drain to Source Voltage (Vdss)	Technology	Operating Temperature [Min]	Operating Temperature [Max]
ON Semiconductor NVB25P06T4G	P-Channel	50 nC	10 V	27.5 A	Surface Mount	82 mOhm	Automotive	4 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	D2PAK	1680 pF	15 V	AEC-Q101	120 W	60 V	MOSFET (Metal Oxide)	-55 °C	175 ░C

Catalog

P-Channel Power MOSFET -60V, -27.5A, 82mΩ

Key Features

• Qualified to AEC Q101

• RoHS Compliant

Description

Power MOSFET designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients. AEC-Q101 Qualified MOSFET.