Discrete Semiconductor Products

SI4456DY-T1-E3

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MOSFET N-CH 40V 33A 8SO

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Discrete Semiconductor Products

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MOSFET N-CH 40V 33A 8SO

Technical Specifications

Parameters and characteristics for this part

Specification	SI4456DY-T1-E3

Current - Continuous Drain (Id) @ 25°C	33 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	122 nC
Input Capacitance (Ciss) (Max) @ Vds	5670 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-SOIC
Package / Case [x]	0.154 in
Package / Case [y]	3.9 mm
Power Dissipation (Max)	7.8 W, 3.5 W
Rds On (Max) @ Id, Vgs	3.8 mOhm
Supplier Device Package	8-SOIC
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.8 V

Part	Power Dissipation (Max)	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs	FET Type	Drain to Source Voltage (Vdss)	Mounting Type	Gate Charge (Qg) (Max) @ Vgs	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id	Technology	Package / Case	Package / Case [y]	Package / Case [x]	Vgs (Max)
Vishay General Semiconductor - Diodes Division SI4456DY-T1-E3	3.5 W 7.8 W	4.5 V 10 V	33 A	-55 °C	150 °C	3.8 mOhm	N-Channel	40 V	Surface Mount	122 nC	8-SOIC	5670 pF	2.8 V	MOSFET (Metal Oxide)	8-SOIC	3.9 mm	0.154 in	20 V

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General part information

N-Channel 40 V 33A (Tc) 3.5W (Ta), 7.8W (Tc) Surface Mount 8-SOIC

Technical documentation and resources