SI4456 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
Beta
⌘K
MOSFET N-CH 40V 33A 8SO
| Part | Power Dissipation (Max) | Drive Voltage (Max Rds On, Min Rds On) | Current - Continuous Drain (Id) @ 25°C | Operating Temperature [Min] | Operating Temperature [Max] | Rds On (Max) @ Id, Vgs | FET Type | Drain to Source Voltage (Vdss) | Mounting Type | Gate Charge (Qg) (Max) @ Vgs | Supplier Device Package | Input Capacitance (Ciss) (Max) @ Vds | Vgs(th) (Max) @ Id | Technology | Package / Case | Package / Case [y] | Package / Case [x] | Vgs (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Vishay General Semiconductor - Diodes Division | 3.5 W 7.8 W | 4.5 V 10 V | 33 A | -55 °C | 150 °C | 3.8 mOhm | N-Channel | 40 V | Surface Mount | 122 nC | 8-SOIC | 5670 pF | 2.8 V | MOSFET (Metal Oxide) | 8-SOIC | 3.9 mm | 0.154 in | 20 V |