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Discrete Semiconductor Products
JANTXV2N7369
ActiveMicrochip Technology
PNP SILICON HIGH-POWER -80V, -10A
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Documents2N7369
Discrete Semiconductor Products
JANTXV2N7369
ActiveMicrochip Technology
PNP SILICON HIGH-POWER -80V, -10A
Deep-Dive with AI
Documents2N7369
Technical Specifications
Parameters and characteristics for this part
| Specification | JANTXV2N7369 |
|---|---|
| DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | 30 hFE |
| Grade | Military |
| Mounting Type | Through Hole |
| Package / Case | TO-254AA, TO-254-3 |
| Power - Max [Max] | 115 W |
| Qualification | MIL-PRF-19500/621 |
| Supplier Device Package | TO-254AA |
| Transistor Type | PNP |
| Vce Saturation (Max) @ Ib, Ic | 1 V |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 80 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Microchip Direct | N/A | 1 | $ 2311.40 | |
Description
General part information
JANTXV2N7369-Transistor Series
This specification covers the performance requirements for PNP silicon, high-power, 2N7369 transistors. Four levels of product assurance (JAN, JANTX, JANTXV and JANS) are provided as specified in MIL-PRF-19500/621. The device package outline is a three terminal flange mount header configuration, modified TO-254AA, (T1).
Documents
Technical documentation and resources