2N5339U3
ActiveTRANS GP BJT NPN 100V 5A 1000MW 3-PIN TO-276AA TRAY
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2N5339U3
ActiveTRANS GP BJT NPN 100V 5A 1000MW 3-PIN TO-276AA TRAY
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | 2N5339U3 |
|---|---|
| Current - Collector (Ic) (Max) | 5 A |
| Current - Collector Cutoff (Max) [Max] | 100 µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | 60 |
| Mounting Type | Surface Mount |
| Package / Case | TO-276AA |
| Power - Max [Max] | 1 W |
| Supplier Device Package | U-3 (TO-276AA) |
| Transistor Type | NPN |
| Vce Saturation (Max) @ Ib, Ic | 1.2 V |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 100 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Bulk | 100 | $ 156.40 | |
| Microchip Direct | N/A | 1 | $ 168.43 | |
| Newark | Each | 100 | $ 156.40 | |
| 500 | $ 150.39 | |||
Description
General part information
2N5339U3-Transistor Series
This specification covers the performance requirements for NPN silicon switching, 2N5339 transistors. Four levels of product assurance (JAN, JANTX, JANTXV and JANS) are provided for each encapsulated device type as specified in MIL-PRF-19500/560 and two levels of product assurance (JANHC and JANKC) are provided for each unencapsulated device type as specified in MIL-PRF-19500/560. Provisions for radiation hardness assurance (RHA) to eight radiation levels is provided for JANS and JANKC product assurance levels. RHA level designators "M", "D", "P", "L", "R", "F", "G", and "H" are appended to the device prefix to identify devices, which have passed RHA requirements.
Documents
Technical documentation and resources