TO-92-3(StandardBody),TO-226_straightlead

Discrete Semiconductor Products

BC637

Obsolete

ON Semiconductor

HIGH CURRENT NPN BIPOLAR TRANSISTOR

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Search across all available documentation for this part.

DocumentsBC635, 637, 639 Datasheet +1

Discrete Semiconductor Products

BC637

Obsolete

ON Semiconductor

HIGH CURRENT NPN BIPOLAR TRANSISTOR

Deep-Dive with AI

DocumentsBC635, 637, 639 Datasheet +1

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	BC637

Current - Collector (Ic) (Max) [Max]	1 A
Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	40
Frequency - Transition	200 MHz
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-92-3 Long Body, TO-226-3
Power - Max [Max]	625 mW
Supplier Device Package	TO-92
Supplier Device Package	TO-226
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	500 mV
Voltage - Collector Emitter Breakdown (Max)	60 V

BC637 Series

Part	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Current - Collector Cutoff (Max) [Max]	Current - Collector (Ic) (Max) [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Vce Saturation (Max) @ Ib, Ic	Mounting Type	Power - Max [Max]	Supplier Device Package	Supplier Device Package	Frequency - Transition	Package / Case	Transistor Type	Voltage - Collector Emitter Breakdown (Max)	Operating Temperature
ON Semiconductor BC637RL1G	40	100 nA	1 A	-55 °C	150 °C	500 mV	Through Hole	625 mW	TO-92	TO-226	200 MHz	Formed Leads TO-226-3 TO-92-3 Long Body	NPN	60 V
ON Semiconductor BC637_D75Z	40	100 nA	1 A			500 mV	Through Hole	1 W	TO-92-3		100 MHz	TO-226-3 TO-92-3	NPN	60 V	150 °C
ON Semiconductor BC637	40	100 nA	1 A	-55 °C	150 °C	500 mV	Through Hole	625 mW	TO-92	TO-226	200 MHz	TO-226-3 TO-92-3 Long Body	NPN	60 V
ON Semiconductor BC637_D26Z	40	100 nA	1 A			500 mV	Through Hole	1 W	TO-92-3		100 MHz	TO-226-3 TO-92-3	NPN	60 V	150 °C
ON Semiconductor BC637_D27Z	40	100 nA	1 A			500 mV	Through Hole	1 W	TO-92-3		100 MHz	TO-226-3 TO-92-3	NPN	60 V	150 °C
ON Semiconductor BC637_J35Z	40	100 nA	1 A			500 mV	Through Hole	1 W	TO-92-3		100 MHz	TO-226-3 TO-92-3	NPN	60 V	150 °C

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

BC637 Series

This NPN Bipolar Transistor is designed for use in industrial and consumer applications. The device is housed in the TO-92 package, which is designed for medium power applications.

Documents

Technical documentation and resources

BC635, 637, 639

Datasheet